We are seeking GaN Power Electronics Device Engineer for the design and testing of power devices in GaN-on-Si technology
Gallium Nitride (GaN) technology offers faster switching power devices with higher breakdown voltages and lower on-resistance than silicon (Si). GaN power devices are a breakthrough technology, revolutionizing the power electronics landscape and have an exciting roadmap for next generation GaN power devices. Imec has developed 100V, 200V and 650V enhancement mode devices on 200mm GaN-on-Silicon wafers with state-of-the-art performance and reproducibility.
We are seeking an experienced semiconductor device modelling engineer who can model GaN power transistors, creating models based on measurement data, defining testing structures and measurements needed to provide data to validate and calibrate models.
Your tasks include:
We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will define the society of tomorrow.
We are committed to being an inclusive employer (http://www.imec-int.com/en/careers#diversity) and proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth.
We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a market appropriate salary with many fringe benefits.
The combination of our widely acclaimed leadership in microchip technology and profound software and ICT expertise is what makes us unique.
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